Preparation and characterization of epitaxially grown yttria-stabilized zirconia thin films on porous silicon substrates for solid oxide fuel cell applications

نویسندگان

چکیده

Epitaxial growth of yttria-stabilized zirconia (YSZ) thin film on through-hole-type porous silicon [tht-PSi(001)] with vertical pores penetrating from the surface to back side Si(001) substrate was achieved. The in-plane and out-of-plane lattice parameters YSZ deposited tht-PSi(001) were, respectively 0.5167 0.5124 nm. Therefore, 0.54 % tensile strain applied film. Also for this work, an all epitaxially grown YSZ/La0.7Sr0.3MnO3(LSMO)/CeO2/YSZ/Si(001) prepared. parameter 0.5145 YSZ/LSMO/CeO2/YSZ/Si(001) is almost relaxed, a small amount (0.12 %). In-plane electrical properties were measured YSZ/tht-PSi(001) films. Results show that ionic conduction confirmed at 400 °C through constant electric conductivity against change oxygen partial pressure (pO2). Enhanced observed epitaxial films along direction. Such enhanced not These findings suggest correlated in

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ژورنال

عنوان ژورنال: Journal of the Ceramic Society of Japan

سال: 2022

ISSN: ['1882-0743', '1348-6535']

DOI: https://doi.org/10.2109/jcersj2.21178